sot23 pnp silicon planar switching transistors issue 2 ? september 95 j partmarking detail ? BSS80B - ch bss80c - cj absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -5 v peak pulse current i cm -800 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo -60 v ic=-10 m a collector-emitter breakdown voltage v (br)ceo -40 v i c =-10ma emitter-base breakdown voltage v (br)ebo -5 ie=-10ma collector cut-off current i cbo -10 -10 na m a v cb =-50v, v cb =-50v, t a =150 o c emitter cut-off current i ebo -10 na v be =-3v collector-emitter saturation voltage v ce(sat) -0.4 -1.6 mv v i c =-150ma,v ce =-10v i c =-150ma,vce=-10v static forward current transfer ratio BSS80B bss80c h fe 40 100 120 300 i c =150ma,v ce =10v i c =150ma,v ce =10v transition frequency f t 200 mhz v ce =-20v,i c =-50ma f=100mhz output capacitance c obo 8pfv cb =-10v,f=1mhz delay time t d 10 ns v cc =-30v, i c =-150ma i b1 =-i b2 =-15ma rise time t r 40 ns storage time t s 80 ns fall time t f 30 ns BSS80B bss80c c b e sot23 page number
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